Determination of the hopping contribution to the thermopower in bismuth infiltrated colloidal crystals
نویسندگان
چکیده
Conductivity and thermopower measurements of artificial three dimensional bismuth crystals are presented. Due to the size dependent band gap of bismuth, electron transport in the bismuth crystals is a combination of both metallic and hopping conduction. The conductivity and thermopower due to the hopping pathways alone can be extracted through a comparison of the properties of the artificial bismuth crystal before and after it is compressed into bulk bismuth. In this way, evidence for the influence of electron-electron interactions on the hopping conductivity is obtained. © 2007 American Institute of Physics. DOI: 10.1063/1.2822463
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